Hall effect characterization of 4H-SiC MOSFETs: Influence of nitrogen channel implantation
نویسندگان
چکیده
Effect of a shallow nitrogen implantation in the channel region of n-channel 4H-SiC Hall bar MOSFETs on their electrical properties has been characterized by Hall effect. A significant improvement of Hall mobility in normally-off devices is observed with increasing nitrogen implantation dose up to 10 13 cm -2 with a peak Hall mobility of 42.4 cm 2 .V -1 .s -1 . Coulomb scattering as dominant scattering mechanism up to room temperature is demonstrated using temperature dependent MOS-Hall effect characterization.
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